any changing of specification will not be informed individual MMBTA42W npn silicon general purpose transistor plastic-encapsulate transistors power dissipation & collector current pcm: 0.2w icm: 0.3a high voltage v (br) : 300v features http://www.secosgmbh.com elektronische bauelemente electrical characteristics tamb=25 unless otherwise specified parameter symbol test conditions min max unit collector- base breakdown voltage v (br)cbo ic= 100 0 a i e =0 300 v collector- emitter brea kdown voltage v (br)ceo ic= 1 m a i b =0 300 v emitter-base breakdown voltage v (br)ebo i e = 100 0 a i c =0 5 v collector cut- off current i cbo v cb =200 v , i e =0 0.25 0 a emitter cut- off current i ebo v eb =5v, i c =0 0.1 0 a h fe
1 v ce = 10v, i c = 1ma 60 h fe
2 v ce = 10v, i c =10ma 100 200 dc current gain h fe
3 v ce =10v, i c =30ma 70 collector- emitter saturation voltage v ce (sat) i c =20 ma, i b = 2m a 0.2 v base- emitter saturation voltage v be (sat) i c = 20 ma, i b =2m a 0.9 v transition frequency f t v ce = 20v, i c = 10ma f= 30mhz 50 mhz device marking MMBTA42W=k3m r o h s c o m p l i a n t p r o d u c t 2 . b a s e 1 . e m i t t e r 3 . c o l l e c t o r k j c h l a b s g v d top view dim min max a 1.800 2.200 b 1.150 1.350 c 0.800 1.000 d 0.300 0.400 g 1.200 1.400 h 0.000 0.100 j 0.100 0.250 k 0.350 0.500 l 0.590 0.720 s 2.000 2.400 v 0.280 0.420 all dimension in mm sot-323 d top view
any changing of specification will not be informed individual MMBTA42W npn silicon general purpose transistor http://www.secosgmbh.com elektronische bauelemente MMBTA42W c, capacitance (pf) fe 1. dc cent gan v r , reverse voltage (volts) 0.1 100 0.1 10 1.0 10 1000 c eb @ 1mhz fe 2. capactance i c , collector current (ma) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 80 70 50 30 20 10 t j = 25 c v ce = 20 v f = 20 mhz f, current?gain bandwidth (mhz) t 1.0 i c , collector current (ma) fe 3. cent ? ? v, voltage (volts) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 100 1.0 c cb @ 1mhz 60 40 v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ ?55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ ?55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ ?55 c, v ce = 10 v fe 4. on votaes i c , collector current (ma) 120 0.1 1.0 10 100 80 60 0 h fe , dc current gain t j = +125 c 25 c ?55 c v ce = 10 vdc 100 20 40
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